这是在P区和N区之间夹一层本征半导体（或低浓度杂质的半导体）构造的晶体二极管。PIN中的I是“本征”意义的英文略语。当其工作频率超过100MHz时，由于少数载流子的存贮效应和“本征”层中的渡越时间效应，其二极管失去整流作用而变成阻抗元件，并且，其阻抗值随偏置电压而改变。在零偏置或直流反向偏置时，“本征”区的阻抗很高；在直流正向偏置时，由于载流子注入“本征”区，而使“本征”区呈现出低阻抗状态。因此，可以把PIN二极管作为可变阻抗元件使用。它常被应用于高频开关（即微波开关）、移相、调制、限幅等电路中。
| 型号 | 品牌 | 功能描述 |
|---|---|---|
| IRF7807D1 | International Rectifier | |
| IRF7807D2 | International Rectifier | |
| IRF7807VD1 | International Rectifier | |
| IRF7807VD2 | International Rectifier | |
| 1N6264 | Optoelectronics | |
| 71061 | Vishay Siliconix | |
| BAT54C-7 | Diodes Incorporated | |
| BAT54CDW | Diodes Incorporated | |
| BAT54CDW-7 | Diodes Incorporated | |
| BAT54CFILM | STMicroelectronics | |
| BAT54CSM | Seme | |
| BAT54C-T1 | Won-Top Electronics | |
| BAT54C-T3 | Won-Top Electronics | |
| BAT54CW-T1 | Won-Top Electronics | |
| BAT54CW-T3 | Won-Top Electronics | |
| BAT54RCLT1 | Zowie Technology Corporation | |
| TLP722 | Toshiba Semiconductor | |
| CD5356B | Compensated Deuices Incorporated | |
| CMZ5356B | Central Semiconductor Corp | |
| DS1104SG27 | Dynex Semiconductor | |
| TR1104SG27 | TRSYS | |
| DS1107SG37 | Dynex Semiconductor | |
| TR1107SG37 | TRSYS | |
| DS1109SG47 | Dynex Semiconductor | |
| DS1112SG57 | Dynex Semiconductor | |
| SG5768 | Microsemi Corporation | |
| SG5770 | Microsemi Corporation | |
| SG5772 | Microsemi Corporation | |
| SG5774 | Microsemi Corporation | |
| SG5774F | Microsemi Corporation | |
| BUPD1520 | Power Innovations Limited | |
| LMH6533 | National Semiconductor | |
| LMH6533SP | National Semiconductor | |
| LMH6533SPX | National Semiconductor | |
| CM521613 | Powerex Power Semiconductors | |
| DF25216 | Dynex Semiconductor | |
| DF45216 | Dynex Semiconductor | |
| CD471290 | Powerex Power Semiconductors | |
| CD471290A | Powerex Power Semiconductors | |
| IMN10 | Rohm | |
| IMP11 | Rohm | |
| 1SV232 | Toshiba Semiconductor | |
| HGT4E20N60A4DS | Fairchild Semiconductor | |
| HGTG20N60A4D | Fairchild Semiconductor | |
| HGTG20N60B3D | Fairchild Semiconductor | |
| HGTG20N60C3D | Fairchild Semiconductor | |
| MGW20N60D | Motorola, | |
| SKW20N60 | Infineon Technologies | |
| 1SV239 | Toshiba Semiconductor | |
| 1SS309 | Toshiba Semiconductor | |
| 1SS301 | Toshiba Semiconductor | |
| 1SV228 | Toshiba Semiconductor | |
| 1SS226 | Toshiba Semiconductor | |
| 1SS181 | Toshiba Semiconductor | |
| 1SS193 | Toshiba Semiconductor | |
| 1SS184 | Toshiba Semiconductor | |
| 1SS300 | Toshiba Semiconductor | |
| 1SS352 | Toshiba Semiconductor | |
| 1SV160 | Toshiba Semiconductor | |
| 1SV285 | Toshiba Semiconductor | |
| MLL957B | Microsemi Corporation | |
| CMZ5953B | Central Semiconductor Corp | |
| BAS125-07 | Siemens Semiconductor Group | |
| BAS125-07W | Siemens Semiconductor Group | |
| BA892 | Philips Semiconductors | |
| BA892-02L | Infineon Technologies | |
| BA892-02V | Infineon Technologies | |
| BAS40-02L | Infineon Technologies | |
| BAS40-02V | Vishay Siliconix | |
| BAS40-02V-GS08 | Vishay Siliconix | |
| BAS40-02V-GS18 | Vishay Siliconix | |
| BAS40-06HT1 | Leshan Radio Company | |
| BAS40-06LT1 | Semiconductor | |
| BAS40-07W | Siemens Semiconductor Group | |
| BAS40BRW | Diodes Incorporated | |
| BAS40DW-04 | Diodes Incorporated | |
| BAS40DW-05 | Diodes Incorporated | |
| BAS40DW-06 | Diodes Incorporated | |
| BAS40L | Philips Semiconductors | |
| BAS40-T1 | Siemens Semiconductor Group |